(STAC9758 / STAC9759) HIGH-PERFORMANCE 6-CHANNEL AC97 2.3 CODEC
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Offer STAC9752 SIGMATEL from Kynix Semiconductor Hong Kong Limited.Interface - CODECs. Page 3 Specifications for the Gateway M275 Convertible Tablet Notebook Audio Audio chipset Sound support Digital DVD audio Volume controls Internal speakers Internal microphone Audio jacks Communications Modem features 10/100 Mbps Ethernet interface features ® Sigmatel Soft Audio AC97 rev 2.3 codec (STAC9752) PCI interface audio. Tempo Semiconductor. Tempo Semiconductor, Inc. Is a leading designer and developer of energy efficient integrated circuit devices fabricated using mainstream CMOS process. The company brings ultra-low power semiconductor technology to the handheld and portable devices mar.
Stac9758
(STAC9758 / STAC9759) HIGH-PERFORMANCE 6-CHANNEL AC97 2.3 CODEC
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Details, datasheet, quote on part number: 2SC5242-R(Q)
Part | 2SC5242-R(Q) |
Category | Semiconductors => Discrete Semiconductors => Transistors Bipolar (BJT) |
Title | Transistors Bipolar (BJT) Transistor NPN 230V 15A |
Description | |
Company | Toshiba |
Datasheet | Download 2SC5242-R(Q) Datasheet |
Quote |
Specifications | |
Manufacturer | Toshiba |
Product Category | Transistors Bipolar (BJT) |
RoHS | Details |
Transistor Polarity | NPN |
Collector- Emitter Voltage VCEO Max | 230 V |
Emitter- Base Voltage VEBO | 5 V |
Maximum DC Collector Current | 15 A |
DC Collector/Base Gain hfe Min | 55 |
Configuration | Single |
Maximum Operating Frequency | 30 MHz (Typ) |
Maximum Operating Temperature | + 150 C |
Mounting Style | Through Hole |
Package / Case | TO-3P |
Packaging | Bulk |
Continuous Collector Current | 15 A |
Gain Bandwidth Product fT | 30 MHz |
Power Dissipation | 130 W |
Factory Pack Quantity | 50 |
Features, Applications |
TOSHIBA Transistor Silicon NPN Triple Diffused Type Unit: mm High Collector breakdown voltage: VCEO 230 V (min) Complementary to 2SA1962 Suitable fro use in 80-W high fidelity audio amplifier's output stage Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO PC Tj Tstg Rating to 150 Unit °C TOSHIBA 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 4.7 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ('Handling Precautions'/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance VCE (sat) VBE fT Cob Test Condition VCB = 0 VEB = 50 mA, = 0 VCE 1 A VCE 0.8 A VCE 7 A VCE 1 A VCB = 1 MHz Min 55 35 Typ. Max V MHz pF Unit A V Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 0.5 0.3 Single nonrepetitive pulse = 25°C Curves must be derated linearly with increase in temperature. 30 100 |
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